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| NTD4858N Power MOSFET 25 V, 73 A, Single N-Channel, DPAK/IPAK Features * * * * * Trench Technology Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com V(BR)DSS 25 V RDS(ON) MAX 6.2 mW @ 10 V ID MAX 73 A Applications * VCORE Applications * DC-DC Converters * High/Low Side Switching MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current tp=10ms Steady State TA = 25C TA = 85C TA = 25C TA = 25C TA = 85C TA = 25C TC = 25C TC = 85C TC = 25C TA = 25C TA = 25C PD IDM IDmaxPkg TJ, TSTG IS dV/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 25 20 14 10.9 2.0 11.2 8.7 1.3 73 56 54.5 146 45 -55 to +175 45 6 112.5 W A A C A V/ns mJ 4 Drain YWW 48 58NG W A CASE 369AA DPAK (Bent Lead) STYLE 2 W A 12 3 4 Unit V V A G 9.3 mW @ 4.5 V D S N-CHANNEL MOSFET 4 4 1 2 3 CASE 369AC CASE 369D 3 IPAK IPAK (Straight Lead) (Straight Lead DPAK) 23 1 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain YWW 48 58NG 4 Drain YWW 48 58NG Current Limited by Package Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt Single Pulse Drain-to-Source Avalanche Energy (TJ = 25C, VDD = 50 V, VGS = 10 V, IL = 15 Apk, L = 1.0 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) TL 260 C 2 1 23 1 Drain 3 Gate Source Gate Drain Source 1 2 3 Gate Drain Source Y WW 4858N G = Year = Work Week = Device Code = Pb-Free Package Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. (c) Semiconductor Components Industries, LLC, 2007 1 December, 2007 - Rev. 0 Publication Order Number: NTD4858N/D NTD4858N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction-to-Case (Drain) Junction-to-TAB (Drain) Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - Steady State (Note 2) 1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 2. Surface-mounted on FR4 board using the minimum recommended pad size. Symbol RqJC RqJC-TAB RqJA RqJA Value 2.75 3.5 73.5 116 Unit C/W ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/ TJ IDSS VGS = 0 V, VDS = 20 V TJ = 25C TJ = 125C VGS = 0 V, ID = 250 mA 25 22 1.0 10 100 V mV/C mA nA Symbol Test Condition Min Typ Max Unit Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS(TH)/TJ RDS(on) VGS = VDS, ID = 250 mA 1.45 5.3 2.5 V mV/C VGS = 10 V VGS = 4.5 V ID = 30 A ID = 30 A 5.2 7.3 55 6.2 9.3 mW S Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time gFS VDS = 1.5 V, ID = 15 A CISS COSS CRSS QG(TOT) QG(TH) QGS QGD QG(TOT) VGS = 10 V, VDS = 15 V, ID = 30 A VGS = 4.5 V, VDS = 15 V, ID = 30 A VGS = 0 V, f = 1.0 MHz, VDS = 12 V 1563 405 200 12.8 1.3 4.7 5.2 25.7 nC nC 19.2 pF td(ON) tr td(OFF) tf td(ON) tr td(OFF) tf VGS = 11.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 12.6 20.2 16.4 5.1 7.7 17.3 23.8 2.8 ns ns 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTD4858N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 30 A TJ = 25C TJ = 125C 0.87 0.73 11.6 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A 7.8 3.7 3.0 nC ns 1.2 V Symbol Test Condition Min Typ Max Unit Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance, DPAK Drain Inductance, IPAK Gate Inductance Gate Resistance tRR ta tb QRR LS LD LD LG RG TA = 25C 2.49 0.0164 1.88 3.46 0.7 nH W 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 NTD4858N TYPICAL PERFORMANCE CURVES 90 10 V ID, DRAIN CURRENT (AMPS) 80 70 60 50 40 30 20 10 0 0 1 2 3 4 3.0 V 2.8 V 5 3.4 V 3.2 V 4V 3.6 V 3.8 V TJ = 25C ID, DRAIN CURRENT (AMPS) 90 80 70 60 50 40 30 20 10 0 1 TJ = 125C TJ = 25C TJ = -55C 2 3 4 5 VDS 10 V VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.040 0.035 0.030 0.025 0.020 0.015 0.010 0.005 0 2 3 4 5 6 7 8 9 10 11 ID = 30 A TJ = 25C 0.010 0.009 0.008 0.007 0.006 VGS = 11.5 V 0.005 0.004 0.003 0.002 10 20 30 40 50 60 70 80 90 TJ = 25C VGS = 4.5 V VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Gate-to-Source Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 ID = 30 A VGS = 10 V IDSS, LEAKAGE (nA) 10000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V 1000 TJ = 150C TJ = 125C 100 10 1 TJ = 25C -25 0 25 50 75 100 125 150 175 0.1 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Drain Voltage http://onsemi.com 4 NTD4858N TYPICAL PERFORMANCE CURVES 2000 1800 C, CAPACITANCE (pF) 1600 1400 1200 1000 800 600 400 200 0 0 Crss 2.5 5 7.5 10 12.5 15 17.5 20 Coss Ciss VGS = 0 V TJ = 25C 10 QT 8 VGS , GATE-TO-SOURCE VOLTAGE (VOLTS) 6 Q1 Q2 VGS 4 2 0 0 ID = 30 A VDD = 15 V TJ = 25C 4 8 12 16 20 24 28 QG, TOTAL GATE CHARGE (nC) DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge 30 IS, SOURCE CURRENT (AMPS) 1000 VDD = 15 V ID = 30 A VGS = 11.5 V t, TIME (ns) 100 VGS = 0 V 25 20 15 10 5 0 0.5 TJ = 25C td(off) tf tr 10 td(on) 1 1 10 RG, GATE RESISTANCE (OHMS) 100 0.6 0.7 0.8 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 1000 I D, DRAIN CURRENT (AMPS) 120 Figure 10. Diode Forward Voltage vs. Current ID = 15 A 100 80 60 40 20 0 25 100 10 ms 100 ms 10 VGS = 20 V SINGLE PULSE TC = 25C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 10 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1 ms 10 ms dc 1 0.1 0.1 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 NTD4858N TYPICAL PERFORMANCE CURVES r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 1.0E-03 1.0E-02 t, TIME (ms) P(pk) RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 0.01 1.0E-05 1.0E-04 1.0E-01 1.0E+00 1.0E+01 Figure 13. Thermal Response ORDERING INFORMATION Device NTD4858NT4G NTD4858N-1G NTD4858N-35G Package DPAK (Pb-Free) IPAK (Pb-Free) IPAK Trimmed Lead (3.5 " 0.15 mm) (Pb-Free) Shipping 2500 / Tape & Reel 75 Units / Rail 75 Units / Rail For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 NTD4858N PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369AA-01 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.025 0.035 0.018 0.024 0.030 0.045 0.386 0.410 0.018 0.023 0.090 BSC 0.180 0.215 0.024 0.040 0.020 --0.035 0.050 0.155 --MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.63 0.89 0.46 0.61 0.77 1.14 9.80 10.40 0.46 0.58 2.29 BSC 4.57 5.45 0.60 1.01 0.51 --0.89 1.27 3.93 --- -TB V R 4 SEATING PLANE C E A S 1 2 3 Z H U F L D 2 PL J DIM A B C D E F H J L R S U V Z 0.13 (0.005) M T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 NTD4858N PACKAGE DIMENSIONS 3 IPAK, STRAIGHT LEAD CASE 369AC-01 ISSUE O NOTES: 1.. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.. CONTROLLING DIMENSION: INCH. 3. SEATING PLANE IS ON TOP OF DAMBAR POSITION. 4. DIMENSION A DOES NOT INCLUDE DAMBAR POSITION OR MOLD GATE. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.043 0.090 BSC 0.034 0.040 0.018 0.023 0.134 0.142 0.180 0.215 0.035 0.050 0.000 0.010 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.09 2.29 BSC 0.87 1.01 0.46 0.58 3.40 3.60 4.57 5.46 0.89 1.27 0.000 0.25 B V R C E A SEATING PLANE W F G K J H D 3 PL 0.13 (0.005) W DIM A B C D E F G H J K R V W IPAK (STRAIGHT LEAD DPAK) CASE 369D-01 ISSUE B B V R 4 C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- Z A 3 S -TSEATING PLANE 1 2 K F D G 3 PL J H 0.13 (0.005) M DIM A B C D E F G H J K R S V Z T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 8 NTD4858N/D |
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